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| Data sheet, BGA614, Nov. 2003 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC Sec ur e M obile Solutions Silico n Discre te s Never stop thinking. Edition 2003-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA614 Data sheet Revision History: Previous Version: Page 2003-11-04 2002-05-27 Subjects (major changes since last revision) Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Silicon Germanium Broadband MMIC Amplifier BGA614 Features * Cascadable 50-gain block * 3 dB-bandwidth: DC to 2.4 GHz with 18.5 dB typical gain at 1.0 GHz * Compression point P-1dB = 12 dBm at 2.0 GHz * Noise figure F50 = 2.30 dB at 2.0 GHz * Absolute stable * 70 GHz fT - Silicon Germanium technology Applications * Driver amplifier for GSM/PCS/CDMA/UMTS * Broadband amplifier for SAT-TV & LNBs * Broadband amplifier for CATV 3 4 2 1 VPS05605 Out, 3 Description The BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40mA. The BGA614 is based on Infineon Technologies' B7HF Silicon Germanium technology. IN, 1 GND, 2,4 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA614 Data sheet Package SOT343 Marking BOs 4 Chip T0565 2003-11-04 BGA614 Maximum Ratings Parameter Device voltage Device current Current into pin In Input power 1) Total power dissipation, TS < 102C Junction temperature Ambient temperature range Storage temperature range Thermal resistance: junction-soldering point Notes: All Voltages refer to GND-Node 1) Valid for ZS=ZL=50, VCC=5V, RBias=62 2) TS is measured on the ground lead at the soldering point 2) Symbol VD ID IIn PIN Ptot Tj TA TSTG Rth JS Value 3 80 0.7 10 240 150 -65 ... +150 -65 ... +150 200 Unit V mA mA dBm mW C C C K/W Electrical Characteristics at TA=25C (measured in test circuit specified in fig. 1) VCC=5V, RBias=62, Frequency=2GHz, unless otherwise specified Parameter Insertion power gain f = 0.1GHz f = 1.0GHz f = 2.0GHz Noise Figure (ZS=50) f = 0.1GHz f = 1.0GHz f = 2.0GHz Output Power at 1dB Gain Compression Output Third Order Intercept Point Input Return Loss Output Return Loss Total Device Current Symbol |S21| 2 min. - typ. 19.5 18.5 17.0 1.95 2.20 2.30 12 25 19 24 40 max. - Unit dB F50 P-1dB OIP3 RLIn RLOut ID - dB dBm dBm dB dB mA Data sheet 5 2003-11-04 BGA614 Data sheet Reference Plane VCC= 5V In Bias-T In GND ID GND Out Reference Plane VD RBias = 62 Bias-T Out Top View Caution: Device Voltage VD at Pin Out! VD = VCC - RBias I D Fig.1: Test Circuit for Electrical Characteristics and S-Parameters S-Parameter VCC=5V, RBias=62 (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.1245 0.0854 0.1133 0.1115 0.1114 0.1205 0.1165 0.1163 0.1159 0.1164 0.1099 0.0775 0.0358 0.0719 0.1365 0.1807 0.2628 S11 Ang 5.9 4.6 11.1 7.8 8.5 9.8 8.9 8.4 6.7 5.7 1.0 -5.3 31.2 116.9 123.3 111.4 101.8 S21 Mag 9.3122 9.3767 9.1886 9.0552 8.7953 8.5065 8.0863 7.8100 7.4972 7.2744 6.9831 5.7650 4.7962 4.0808 3.5461 3.0857 2.7951 S21 Ang 177.5 172.8 165.1 157.9 150.8 144.1 137.8 131.1 125.6 120.0 114.8 91.5 71.7 53.3 36.1 20.8 4.4 S12 Mag 0.0840 0.0825 0.0832 0.0837 0.0834 0.0848 0.0857 0.0883 0.0899 0.0923 0.0944 0.1114 0.1316 0.1541 0.1759 0.1971 0.2197 S12 Ang 0.0 1.5 2.7 4.7 6.6 8.4 9.9 11.4 13.0 13.7 15.1 17.9 17.2 13.3 7.6 1.0 -7.7 S22 Mag 0.1288 0.1266 0.1268 0.1220 0.1146 0.1049 0.0948 0.0869 0.0779 0.0706 0.0642 0.0623 0.1391 0.2209 0.2793 0.3398 0.4199 S22 Ang -0.9 -4.8 -10.0 -16.9 -23.1 -30.4 -37.5 -45.4 -54.7 -65.1 -75.7 -159.0 163.7 144.4 126.3 113.0 103.4 Data sheet 6 2003-11-04 BGA614 Data sheet Power Gain |S | , G = f(f) 21 ma V = 5V, R = 62, I = 40mA CC Bias C 20 2 Matching |S |, |S | = f(f) 11 22 V = 5V, R = 62, I = 40mA CC Bias C 0 G 18 ma |S |2 16 14 21 -5 -10 |S21| , Gma [dB] 12 10 8 6 4 |S |, |S | [dB] 22 -15 11 S22 2 -20 S11 -25 2 0 -1 10 -30 -1 10 10 0 10 1 10 0 10 1 Frequency [GHz] Frequency [GHz] Power Gain |S | = f(I ) 21 D f = parameter in GHz 20 18 16 14 Output Compression Point P = f(I ), f = 2GHz -1dB 20 D 1 2 3 18 16 14 4 |S21| [dB] [dBm] P 80 -1dB 12 10 8 6 4 2 0 0 20 40 60 12 10 8 6 4 2 0 0 20 40 60 80 2 6 8 ID [mA] ID [mA] Data sheet 7 2003-11-04 BGA614 Data sheet Device Current I = f(V ) D CC R = parameter in Bias 80 Device Current I = f(T ) D A V = 5V,R = parameter in CC Bias 50 70 0 16 27 47 48 46 60 44 50 56 68 42 I D [mA] I [mA] 62 40 38 40 100 30 D 68 150 36 34 20 10 32 30 -20 0 0 1 2 3 4 5 6 0 20 40 60 80 VCC [V] TA [C] Noise figure F = f(f) V = 5V, R = 62, Z = 50 CC Bias S T = parameter in C A 3 Package Outline 2 0.2 1.3 0.1 0.9 0.1 0.20 3 M B B 0.1 max A +80C 2.5 4 -20C 2 1 0.3 +0.1 2 0.15 +0.1 -0.05 0.6 +0.1 0.20 M F [dB] 1.5 A GPS05605 1 0.5 0 0 0.5 1 1.5 2 2.5 3 Frequency [GHz] Data sheet 8 2003-11-04 1.25 0.1 2.10.1 +25C +0.2 acc. to DIN 6784 |
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